IMH20T1G Dual Bias Resistor Transistor
NPN Surface Mount
• Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA • High Curren...
IMH20T1G Dual Bias Resistor
Transistor
NPN Surface Mount
Low VCC (sat) 80 mV max at IC/IB = 50 mA/2.5 mA High Current: IC = 600 mA max Lead Free Plating
MAXIMUM RATINGS (TA = 25°C)
Rating Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 30 15 5.0 600 Unit Vdc Vdc Vdc mAdc (3) Max 300 150 - 55 to +150 Unit mW °C °C SC - 74 PD TJ Tstg Q2 R1 Q1 (2) (1) (4) (5)
http://onsemi.com
(6)
R1
THERMAL CHARACTERISTICS
Characteristic Power Dissipation* Junction Temperature Storage Temperature *Total for both Elements Symbol
6 1
MARKING DIAGRAM
xx M SC - 74
xx M
= Specific Device Code = Date Code
ORDERING INFORMATION
Device{
Package SC - 74
Shipping 3000/Tape & Reel
IMH20T1G
†The “T1” suffix refers to a 7 - inch reel.
© Semiconductor Components Industries, LLC, 2003
July, 2003 - Rev. 0
Publication Order Number: IMH20T1G/D
IMH20T1G
Q1 + Q2:
NPN
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Collector- Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector- Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Emitter- Base Breakdown Voltage (IE = 50 mAdc, IC = 0) Collector- Base Cutoff Current (VCB = 20 Vdc, IE = 0) Emitter- Base Cutoff Current (VEB = 4.0 V, IC = 0) DC Current Gain (Note 1) (VCE = 5.0 Vdc, IC = 50 mAdc) Collector- Emitter Saturation Voltage (IC = 50 mAdc, IB = 2.5 mAdc) Input Resistance 1. Pulse Test: Pulse Width ≤ 300 ms, D.C. ...
