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STP20NK50Z

ST Microelectronics

N-CHANNEL POWER MOSFET

STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH™Power MOSFET TARGET DATA TY...


ST Microelectronics

STP20NK50Z

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Description
STP20NK50Z - STW20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/TO-247 Zener-Protected SuperMESH™Power MOSFET TARGET DATA TYPE STP20NK50Z STW20NK50Z s s s s s s VDSS 500 V 500 V RDS(on) < 0.27 Ω < 0.27 Ω ID 20 A 20 A Pw 190 W 190 W TYPICAL RDS(on) = 0.23 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY 3 2 1 TO-220 TO-247 DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC s ORDERING INFORMATION SALES TYPE STP20NK50Z STW20NK50Z MARKING P20NK50Z W20NK50Z PACKAGE TO-220 TO-247 PACKAGING TUBE TUBE July 2003 1/7 STP20NK50Z - STW20NK50Z ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT VESD(G-S) dv/dt (1) Tj Tstg Parameter STP20NK50Z Value STW20NK50Z Unit V V V 20 10 64 190 1.51 A A A W W/°C V V/ns °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Di...




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