STP20NE06L

® STP20NE06L STP20NE06LFP N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP STripFET™ POWER MOSFET TYPE STP20NE06L STP20NE06LF P s s s s s V DSS 60 V 60 V R DS( on ) < 0.07 Ω < 0.07 Ω ID 20 A 13 A TYPICAL RDS(on) = 0.06 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION 1 3 2 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC MOTOR CONTROL s DC-DC & DC-AC CONVERTERS s SYNCHRONOUS RECTIFICATION TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol Parameter Value STP20NE06 V DS V DGR V GS ID ID I DM ( ) P tot V ISO dv/dt T s tg Tj April 1999 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage T emperature Max. O perating Junct ion T emperature o o o Unit ST P20NE06F P 60 60 ± 20 V V V 13 9 80 30 0.2 2000 7 A A A W W /o C V V/ns o o 20 14 80 70 0.47  -65 to 175 175 C C 1/9 () Pulse width limited by safe operatin...