STP200NF04 STB200NF04 - STB200NF04-1
N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET
Table 1: Gener...
STP200NF04 STB200NF04 - STB200NF04-1
N-CHANNEL 40V - 120 A - 3.3 mΩ TO-220/D²PAK/I²PAK STripFET™II MOSFET
Table 1: General Features
Type STB200NF04 STB200NF04-1 STP200NF04
s s
Figure 1: Package
ID 120 A 120 A 120 A Pw 310 W 310 W 310 W
3
3 1 2
VDSS 40 V 40 V 40 V
RDS(on) < 0.0037 Ω < 0.0037 Ω < 0.0037 Ω
STANDARD THRESHOLD DRIVE 100% AVALANCHE TESTED TO-220
1
D2PAK
DESCRIPTION This MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting
transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
12
3
I2PAK Figure 2: Internal Schematic Diagram
APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s AUTOMOTIVE
Table 2: Order Codes
SALES TYPE STB200NF04T4 STB200NF04-1 STP200NF04 MARKING B200NF04 B200NF04 P200NF04 PACKAGE D2PAK I2PAK TO-220 PACKAGING TAPE & REEL TUBE TUBE
Rev. 3 October 2004 1/15
STP200NF04 - STB200NF04 - STB200NF04-1
Table 3: Absolute Maximum ratings
Symbol VDS VDGR VGS ID (#) ID (#) IDM ( ) PTOT dv/dt (1) EAS (2) Tj Tstg Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Operating Junction Temperature Storage ...
