ST5811

Semiconductor ST5811 Photo Transistor Features Lensed for high sensitivity φ5mm(T-13/4) all plastic mold type High reliability and stable characteristics Visible light cut-off type Outline Dimensions unit : mm PIN Connections 1. Emitter 2.Collector KPT-0003-000 1 ST5811 Absolute maximum ratings Characteristic Collector-Emitter Voltage Emitter-Collector Voltage Collector Current Collector Power Dissipation Operating Temperature Storage Temperature * Soldering Temperature 1 Symbol VCEO VECO IC PD Topr Tstg Tsol Ratings 35 6 20 75 -25 -30 260 85 100 for 5 seconds Unit V V mA mW *1. Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Current Dark Current Symbol ICEO ICEL Test Condition VCEO=10V, Ee=0 VCE=5V, Ee IC=0.5mA, Ee 1mW/ 1mW/ Min - Typ 0.05 4.5 0.2 2.5 3.8 Max 0.5 - Unit uA mA V us nm *3Light Current Current-Emitter Saturation Voltage Switching Time Rise Time Fall Time VCE(sat) tr tf VCC=10V, IC=1mA R1=100 - Spectral Sensitivity Peak Sensitivity Wavelength Half angle P 700 ~ 1000 880 ±20 - IF= 20mA nm deg θ1/2 30% *1. Tolerance = KPT-0003-000 2 Characteristic Diagrams Fig. 1 ICEL - Ee Fig. 2 ICEL - VCE ST5811 Light Current ICEL [mA] Irradiance Ee [ / ] Light Current ICEL [mA] Collector-Emitter Voltage VCE [V] Fig. 3 PD – Ta Power Dissipation PD [mW] Fig.4 ICEO – Ta ] Ambient Temperature Ta [ ] Collector Dark Current ICEO [ Ambient Temperature Ta [ ] Fig. 5 ...