STP140NF75

N-CHANNEL 75V - 0.0065 Ω -120A D²PAK/I²PAK/TO-220 STripFET™ II POWER MOSFET AUTOMOTIVE SPECIFIC TYPE STB140NF75 STP140NF75 STB140NF75-1 s s STB140NF75 STP140NF75 STB140NF75-1 VDSS 75 V 75 V 75 V RDS(on) <0.0075 Ω <0.0075 Ω <0.0075 Ω ID 120 A(**) 120 A(**) 120 A(**) 3 1 3 12 TYPICAL RDS(on) = 0.0065 Ω SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s HIGH CURRENT, HIGH SWITCHING SPEED s SOLENOID AND RELAY DRIVERS s AUTOMOTIVE 42V BATTERY DRIVERS D2PAK TO-263 (Suffix “T4”) 3 1 2 I2PAK TO-262 TO-220 INTERNAL SCHEMATIC DIAGRAM Ordering Information SALES TYPE STB140NF75T4 STP140NF75 STB140NF75-1 MARKING B140NF75 P140NF75 B140NF75 PACKAGE D2PAK TO-220 I2PAK PACKAGING TAPE & REEL TUBE TUBE ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25°C ID(**) Drain Current (continuous) at TC = 100°C ID IDM() Drain Current (pulsed) Ptot Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Operating Junction Temperatur...