M366S3323CT0-C75

M366S3323CT0 Revision History Revision 0.0 (May, 2000) PC133 first published. PC133 Unbuffered DIMM Revision 0.1 (July, 2000) Added PC100@CL3 data on DC Characteristics, Operating AC Parameter, AC Characteristics. m o c . u 4 t e e h s a t a .d w w w REV. 0.1 July. 2000 www.DataSheet4U.com M366S3323CT0 M366S3323CT0 SDRAM DIMM PC133 Unbuffered DIMM 32Mx64 SDRAM DIMM based on 16Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung M366S3323CT0 is a 32M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung M366S3323CT0 consists of sixteen CMOS 16M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The M366S3323CT0 is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock. I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable latencies allows the same device to be useful for a variety of high bandwidth, high performance memory system applications. FEATURE Performance range Part No. M366S3323CT0-C75 Max Freq. (Speed) PC133@CL3 & PC100@CL3 Burst mode operation Auto & self refresh capability (4096 Cycles/64ms) LVTTL compatible inputs and outputs Single 3.3V ± 0....