TC58FV321

TC58FVT321/B321FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32-MBIT (4M × 8 BITS / 2M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVT321/B321 is a 33,554,432-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 4,194,304 words × 8 bits or as 2,097,152 words × 16 bits. The TC58FVT321/B321 features commands for Read, Program and Erase operations to allow easy interfacing with microprocessors. The commands are based on the JEDEC standard. The Program and Erase operations are automatically executed in the chip. The TC58FVT321/B321 also features a Simultaneous Read/Write operation so that data can be read during a Write or Erase operation. FEATURES Power supply voltage VDD = 2.7 V~3.6 V Operating temperature Ta = −40°C~85°C Organization 4M × 8 bits / 2M × 16 bits Functions Simultaneous Read/Write Auto Program, Auto Erase Fast Program Mode / Acceleration Mode Program Suspend/Resume Erase Suspend/Resume data polling / Toggle bit block protection, boot block protection Automatic Sleep, support for hidden ROM area common flash memory interface (CFI) Byte/Word Modes Block erase architecture 8 × 8 Kbytes / 63 × 64 Kbytes Boot block architecture TC58FVT321FT/XB: top boot block TC58FVB321FT/XB: bottom boot block Mode control Compatible with JEDEC standard commands Erase/Program cycles 105 cycles typ. Access time 70 ns (CL: 30 pF) 100 ns (CL: 100 pF) Power consumption 10 µA (Standby) 30 mA (Read operation)...