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GM71C4403C

Hynix Semiconductor

1M x 4 Bit CMOS DRAM

LG Semicon Co.,Ltd. Description The GM71C4403C is the new generation dynamic RAM organized 1,048,576 words x 4 bit. GM71...


Hynix Semiconductor

GM71C4403C

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Description
LG Semicon Co.,Ltd. Description The GM71C4403C is the new generation dynamic RAM organized 1,048,576 words x 4 bit. GM71C4403C has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C4403C offers Extended Data Out (EDO) Mode as a high speed access Mode. Multiplexed address inputs permit the GM71C4403C to be packaged in a standard 300mil 20(26) pin plastic SOJ , and standard 300mil 20(26) pin plastic TSOP II. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment. System oriented features include single power supply of 5V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. GM71C4403C 1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM Features * 1,048,576 Words x 4 Bit Organization * Extended Data Out Mode Capability * Single Power Supply (5V+/-10%) * Fast Access Time & Cycle Time (Unit: ns) tRAC GM71C4403C-60 GM71C4403C-70 GM71C4403C-80 60 70 80 tCAC 15 18 20 tRC 104 124 144 tHPC 25 30 35 * Low Power Active : 605/550/495mW (MAX) Standby : 5.5mW (CMOS level : MAX) * RAS Only Refresh, CAS before RAS Refresh, Hidden Refresh Capability * All inputs and outputs TTL Compatible *1024 Refresh Cycles/16ms Pin Configuration 20 (26) SOJ I/O1 I/O2 WE RAS A9 1 2 3 4 5 20 19 18 17 16 20 (26) TSOP II VSS I/O4 I/O3 CAS OE I/O1 I/O2 WE RAS A9 1 2 3 4 5 20 19 18 17 16 VSS I/O4 I/O3 CAS OE VSS I...




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