MSA-1023

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1023 Features High Output Power: +27 dBm Typical P1dB at 1.0␣ GHz Low Distortion: 37 dBm Typical IP3 at 1.0␣ GHz 8.5 dB Typical Gain at 1.0␣ GHz Hermetic, Metal/Beryllia Stripline Package Impedance Matched to 25 Ω for Push-Pull Configurations This MMIC is designed for use in a push-pull configuration in a 25␣ Ω system. The MSA-1023 can also be used as a single-ended amplifier in a 50␣ Ω system with slightly reduced performance. Typical applications include narrow and broadband RF amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 230 mil BeO Flange Package Description The MSA-1023 is a high performance, medium power silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, BeO flange package for good thermal characteristics. Typical Push-Pull Biasing Configuration R bias VCC > 20 V RFC C block 1 50 Ω 1 MSA 4 C block MSA IN 3 2 4 3 C block RFC VCC > 20 V R bias Vd = 15 V 50 Ω OUT C block 2 5965-9554E 6-446 MSA-1023 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperatu...