MSA-1100

Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1100 Features High Dynamic Range Cascadable 50␣ Ω or 75␣ Ω Gain Block 3 dB Bandwidth: 50␣ MHz to 1.6␣ GHz 17.5 dBm Typical P1dB at 0.5␣ GHz 12␣ dB Typical 50␣ Ω Gain at 0.5␣ GHz 3.5␣ dB Typical Noise Figure at 0.5␣ GHz combining low noise figure with high IP3. Typical applications include narrow and broadband linear amplifiers in industrial and military systems. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400°C and either wedge or ball bonding using 0.7 mil gold wire. Chip Outline[1] 3 5 2 1 4 Description The MSA-1100 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for high dynamic range in either 50 or 75␣ Ω systems by This chip is intended to be used with an external blocking capacitor completing the shunt feedback path (closed loop). Data sheet characterization is given for a 200␣ pF capacitor. Low frequency performance can be extended by using a larger valued capacitor.[1] Note: 1. Refer to the APPLICATIONS section “Silicon MMIC Chip Use” for additional information. Typical B...