MT5C6404

SRAM Austin Semiconductor, Inc. 16K x 4 SRAM SRAM MEMORY ARRAY MT5C6404 PIN ASSIGNMENT (Top View) 22-Pin DIP (C) (300 MIL) A5 A6 A7 A8 A9 A10 A11 A12 A13 CE\ Vss 1 2 3 4 5 6 7 8 9 10 11 22 21 20 19 18 17 16 15 14 13 12 Vcc A4 A3 A2 A1 A0 DQ4 DQ3 DQ2 DQ1 WE\ AVAILABLE AS MILITARY SPECIFICATIONS SMD 5962-86859 SMD 5962-89692 MIL-STD-883 FEATURES Speeds: 12, 15, 20, 25, 35, 45, 55, and 70ns Battery Backup: 2V data retention High-performance, low-power CMOS double-metal process Single +5V (+10%) Power Supply Easy memory expansion with CE\ All inputs and outputs are TTL compatible GENERAL DESCRIPTION The Austin Semiconductor SRAM family employs high-speed, low-power CMOS designs using a four-transistor memory cell. Austin Semiconductor SRAMs are fabricated using double-layer metal, double-layer polysilicon technology. For flexibility in high-speed memory applications, Austin Semiconductor offers chip enable (CE\) on all organizations. This enhancement can place the outputs in High-Z for additional flexibility in system design. Writing to these devices is accomplished when write enable (WE\) and CE\ inputs are both LOW. Reading is accomplished when WE\ remains HIGH and CE\ goes LOW. The device offers a reduced power standby mode when disabled. This allows system designs to achieve low standby power requirements. All devices operate from a single +5V power supply and all inputs and outputs are fully TTL compatible. OPTIONS Timing 12ns access 15ns access 20n...