(UPD23C64340 / UPD23C64380) 64M-BIT MASK-PROGRAMMABLE ROM
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C64340, 23C64380
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4...
Description
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C64340, 23C64380
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
Description
The µPD23C64340 and µPD23C64380 are 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE mode : 8,388,608 words by 8 bits, WORD mode : 4,194,304 words by 16 bits). The active levels of OE (Output Enable Input) can be selected with mask-option. The µPD23C64340 and µPD23C64380 are packed in 48-pin TAPE FBGA.
Features
Pin compatible with NOR Flash Memory Word organization 8,388,608 words by 8 bits (BYTE mode) 4,194,304 words by 16 bits (WORD mode) Page access mode BYTE mode : 8 byte random page access (µPD23C64340) 16 byte random page access (µPD23C64380) WORD mode : 4 word random page access (µPD23C64340) 8 word random page access (µPD23C64380) Operating supply voltage : VCC = 2.7 V to 3.6 V
Operating supply voltage VCC Access time / Page access time ns (MAX.) Power supply current (Active mode) mA (MAX.) Standby current (CMOS level input)
µA (MAX.)
µPD23C64340
3.0 V ± 0.3 V 3.3 V ± 0.3 V 100 / 25 90 / 25 40 55
µPD23C64380
60 75 30
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Document No. M16335EJ3V1DS...
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