N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
STE36N50-DK
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE
TYPE STE36N50-DK
s
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STE36N50-DK
N - CHANNEL ENHANCEMENT MODE POWER MOS
TRANSISTOR AND ULTRA-FAST DIODE IN ISOTOP PACKAGE
TYPE STE36N50-DK
s
V DSS 500 V
R DS( on) < 0.14 Ω
ID 36 A
4 3
s s s s s
s s s s
s
DEDICATED FOR POWER FACTOR CORRECTOR APPLICATIONS LOW GATE CHARGE MOSFET TURBOSWITCH DIODE INCORPORATED HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT EXTREMELY LOW Rth JUNCTION TO CASE VERY LOW DRAIN TO CASE CAPACITANCE VERY LOW INTERNAL PARASITIC INDUCTANCE (TYPICALLY < 5 nH) ISOLATED PACKAGE UL RECOGNIZED (FILE No E81743)
1 2
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
INDUSTRIAL APPLICATIONS: SMPS & UPS s MOTOR CONTROL s WELDING EQUIPMENT s POWER FACTOR CORRECTOR s ASYMMETRICAL HALF BRIDGE SMPS (WITH COMPLIMENTARY STE36N50-DA)
s
MOSFET ABSOLUTE MAXIMUM RATINGS
Symbol VD S V DG R V GS ID ID ID M( ) P tot T stg Tj V ISO Parameter Drain-Source Voltage (V GS = 0) Drain-Gate Voltage (RGS = 20 k Ω ) Gate-Source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature Insulation Withstand Voltage (AC-RMS)
o o
Value 500 500 ± 20 36 24 144 380 3.3 -55 to 150 150 2500
Unit V V V A A A W W/o C
o o
C C
V
() Pulse width limited by safe operating area
September 1994
1/9
STE36N50-DK
DIODE ABSOLUTE MAXIMUM RATINGS
Symbol V RRM V RS M I F(RMS ) I FRM P to t Parameter Repeti...