N-Channel Enhancement Mode Field Effect Transistor
S amHop Microelectronics C orp.
S T S 2336A
Dec 26 2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R OD...
Description
S amHop Microelectronics C orp.
S T S 2336A
Dec 26 2004
N-C hannel E nhancement Mode Field E ffect Trans is tor
P R ODUC T S UMMAR Y
V DS S
20V
F E AT UR E S
( m W ) Max
ID
3A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
60@ V G S = 4.5V 120@ V G S =2.5V
R ugged and reliable. S OT-23 package.
D
S OT-23
D S G
G
S
AB S OL UTE MAXIMUM R ATINGS (T A =25 C unles s otherwis e noted)
P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ T J =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange
a
S ymbol V DS V GS ID IDM IS PD T J , T S TG
Limit 20 10 3 12 1.25 1.25 -55 to 150
Unit V V A A A W C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a R thJA 100 C /W
1
S T S 2336A
E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted)
Parameter OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS
c
S ymbol
Condition
V GS = 0V, ID = 250uA V DS = 16V, V GS = 0V V GS = 10V, V DS =0V V DS = V GS , ID = 250uA V GS = 4.5V, ID = 2.5A V GS = 2.5V, ID= 1A V DS = 5V, V GS = 4.5V V DS = 5V, ID =2.5A
Min Typ C Max Unit
20 1 100 0.5 0.8 50 90 8 6 330 110 60 1.5 60 120 V uA nA V
m-ohm m-ohm
ON CHAR ACTE R IS TICS b
Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forwa...
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