Document
STN4NF03L
N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET
TYPE STN4NF03L
s s
VDSS 30V
RDS(on) <0.05Ω
ID 6.5A
2
TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE
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DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
SOT-223
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ±16 6.5 4.5 26 3.3 0.026 200 –55 to 175
(1) Starting Tj=25°C, ID=6.5A, VDD=15V
Unit V V V A A A W W/°C mJ °C
(q ) Pulse width limited by safe operating area
December 2002
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STN4NF03L
THERMAL DATA
Rthj-PCB Rthj-PCB Tl Thermal Resistance Junction-PC Board Max (*) Thermal Resistance Junction-PCB Max (**) Maximum Lead Temperature For Soldering Purpose (1.6 mm from case for 10s)
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38 100 260
°C/W °C/W °C
Note: (*) When mounted on 1 in FR-4 board , 2 oz Cu, t<10s. Note: (**) Minimum recommended footprint
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF
Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±16V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA
ON (1)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2 A VGS = 5 V, ID = 2 A Min. 1 0.039 0.046 0.05 0.06 Typ. Max. Unit V Ω Ω
DYNAMIC
Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V , ID =2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. 1 Typ. 3 330 90 40 Max. Unit S pF pF pF
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ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 2 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) VDD = 24 V, ID = 4 A, VGS = 10 V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) Parameter Turn-off-Delay Time Test Conditions VDD = 15 V, ID = 2 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 25 Max. Unit ns
tf Symbol ISD ISDM .