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STN4NF03L Dataheets PDF



Part Number STN4NF03L
Manufacturers ST Microelectronics
Logo ST Microelectronics
Description N-CHANNEL POWER MOSFET
Datasheet STN4NF03L DatasheetSTN4NF03L Datasheet (PDF)

STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET TYPE STN4NF03L s s VDSS 30V RDS(on) <0.05Ω ID 6.5A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturi.

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STN4NF03L N-CHANNEL 30V - 0.039Ω - 6.5A SOT-223 STripFET™ II POWER MOSFET TYPE STN4NF03L s s VDSS 30V RDS(on) <0.05Ω ID 6.5A 2 TYPICAL RDS(on) = 0.039Ω LOW THRESHOLD DRIVE 1 2 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature Size™ ” stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. SOT-223 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s DC-DC & DC-AC CONVERTERS s DC MOTOR CONTROL (DISK DRIVES, etc.) s SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 30 30 ±16 6.5 4.5 26 3.3 0.026 200 –55 to 175 (1) Starting Tj=25°C, ID=6.5A, VDD=15V Unit V V V A A A W W/°C mJ °C (q ) Pulse width limited by safe operating area December 2002 1/8 STN4NF03L THERMAL DATA Rthj-PCB Rthj-PCB Tl Thermal Resistance Junction-PC Board Max (*) Thermal Resistance Junction-PCB Max (**) Maximum Lead Temperature For Soldering Purpose (1.6 mm from case for 10s) 2 38 100 260 °C/W °C/W °C Note: (*) When mounted on 1 in FR-4 board , 2 oz Cu, t<10s. Note: (**) Minimum recommended footprint ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±16V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA nA ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS, ID = 250 µA VGS = 10 V, ID = 2 A VGS = 5 V, ID = 2 A Min. 1 0.039 0.046 0.05 0.06 Typ. Max. Unit V Ω Ω DYNAMIC Symbol gfs (1) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 10 V , ID =2 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. 1 Typ. 3 330 90 40 Max. Unit S pF pF pF 2/8 STN4NF03L ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions VDD = 15 V, ID = 2 A RG = 4.7Ω VGS = 4.5 V (see test circuit, Figure 3) VDD = 24 V, ID = 4 A, VGS = 10 V Min. Typ. 11 100 6.5 3.6 2 9 Max. Unit ns ns nC nC nC SWITCHING OFF Symbol td(off) Parameter Turn-off-Delay Time Test Conditions VDD = 15 V, ID = 2 A, RG = 4.7Ω, VGS = 4.5 V (see test circuit, Figure 3) Min. Typ. 25 Max. Unit ns tf Symbol ISD ISDM .


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