IXTQ36N50P

PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 36N50P IXTQ 36N50P IXTT 36N50P IXTV 36N50P IXTV 36N50PS VDSS = ID25 = ≤ RDS(on) 500 36 170 V A mΩ TO-3P (IXTQ) Symbol V DSS VDGR VGS VGSM I D25 IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient T C = 25° C TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 3 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque(TO-247) Mounting force (PLUS220) TO-247 TO-268 PLUS220 TO-3P Maximum Ratings 500 V 500 V G DS ±30 V ±40 V TO-247 (IXTH) 36 A 108 A 36 A 50 mJ 1.5 J 10 V/ns TO-268 (IXTT) (TAB) (TAB) 540 W -55 ... +150 °C 150 °C -55 ... +150 °C G S 300 °C PLUS220 (IXTV) 260 °C 1.13/10 Nm/lb.in. 20..120/4.5..15 6 5 2 5.5 N/lb G g DS g g PLUS220 SMD(IXTV..S) g D (TAB) D (TAB) Symbol Test Conditions (TJ = 25° C unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 250 µA Characteristic Values Min. Typ. Max. 500 V 3.0 5.0 V G S D (TAB) G = Gate S = Source D = Drain TAB = Drain IGSS I DSS RDS(on) VGS = ±30 VDC, VDS = 0 V =V DS DSS VGS = 0 V TJ = 125° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % ±100 nA 25 µA 250 µA 170 mΩ Features l International standard packages l Unclam...