MT6L61AT

MT6L61AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L61AT VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC (Note1) Tj Tstg Rating Q1 10 5 1.5 25 10 200 125 -55~125 Q2 10 5 2 40 10 Unit V V V mA mA mW °C °C JEDEC JEITA TOSHIBA ― ― 2-2JA1C Note1: Total power dissipation of Q1 and Q2 Q1 Three pin SSM type part No. MT3S07S Q2 MT3S04AS Weight: 0.008 g (typ.) 1 2002-01-18 MT6L61AT Electrical Characteristics Q1-Side (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Insertion gain Symbol ICBO IEBO hFE fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) Cre Test Condition VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 5 mA VCE = 3 V, IC = 10 mA VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCE = 1 V, IC = 5 mA, f = 2 GHz VCE = 3 V, IC = 5 mA, f = 2 GHz VCB = 1 V, IE = 0, f = 1 MHz (Note2) Min ¾ ¾ 70 10 ¾ 4 ¾ ¾ ¾ Typ. ¾ ¾ ¾ 12 6.5 7 1.6 1.5 0.45 Max 0.1 1 140 ¾ ¾ ¾ 3 3 0.85 Unit mA mA ¾ GHz dB Noise figure Reverse transfer capacitance dB pF Electrical Characteristics Q2-Side (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Transition frequency Symbol ICB...