IS61LV12816

IS61LV12816 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY FEATURES High-speed access time: 8, 10, 12, and 15 ns CMOS low power operation TTL and CMOS compatible interface levels Single 3.3V ± 10% power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available ISSI DESCRIPTION ® NOVEMBER 2000 The ISSI IS61LV12816 is a high-speed, 2,097,152-bit static RAM organized as 131,072 words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 8 ns with low power consumption. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable inputs, CE and OE. The active LOW Write Enable (WE) controls both writing and reading of the memory. A data byte allows Upper Byte (UB) and Lower Byte (LB) access. The IS61LV12816 is packaged in the JEDEC standard 44-pin 400-mil SOJ, 44-pin TSOP, 44-pin LQFP, and 48-pin mini BGA (6mm x 8mm). FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 128K x 16 MEMORY ARRAY VCC GND I/O0-I/O7 Lower Byte I/O8-I/O15 Upper Byte I/O DATA CIRCUIT COLUMN I/O CE OE WE UB LB ISSI reserves the right to make changes to its products at any time without notice in order to improve des...