MC14572UB

MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14572UB Hex Gate The MC14572UB hex functional gate is constructed with MOS P–channel and N–channel enhancement mode devices in a single monolithic structure. These complementary MOS logic gates find primary use where low power dissipation and/or high noise immunity is desired. The chip contains four inverters, one NOR gate and one NAND gate. Diode Protection on All Inputs Single Supply Operation Supply Voltage Range = 3.0 Vdc to 18 Vdc NOR Input Pin Adjacent to VSS Pin to Simplify Use As An Inverter NAND Input Pin Adjacent to VDD Pin to Simplify Use As An Inverter NOR Output Pin Adjacent to Inverter Input Pin For OR Application NAND Output Pin Adjacent to Inverter Input Pin For AND Application Capable of Driving Two Low–power TTL Loads or One Low–Power Schottky TTL Load over the Rated Temperature Range L SUFFIX CERAMIC CASE 620 P SUFFIX PLASTIC CASE 648 D SUFFIX SOIC CASE 751B ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS* (Voltages Referenced to VSS) Symbol VDD Parameter DC Supply Voltage Value Unit V V mA – 0.5 to + 18.0 Vin, Vout Iin, Iout PD Tstg TL Input or Output Voltage (DC or Transient) Input or Output Current (DC or Transient), per Pin Power Dissipation, per Package† Storage Temperature Lead Temperature (8–Second Soldering) – 0.5 to VDD + 0.5 ± 10 500 – 65 to + 150 260 mW ORDERING INFORMATION MC14XXXUBCP MC14XXXUBCL MC14XXXUBD Plastic Ceramic SOIC ...