2N5060 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular PNPN devices designed...
2N5060 Series
Sensitive Gate
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Annular P
NPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
Supplied in an inexpensive plastic TO−92/TO-226AA package which
is readily adaptable for use in automatic insertion equipment. Features
Sensitive Gate Trigger Current − 200 mA Maximum
Low Reverse and Forward Blocking Current − 50 mA Maximum,
TC = 110°C
Low Holding Current − 5 mA Maximum
Passivated Surface for Reliability and Uniformity
These are Pb−Free Devices
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Peak Repetitive Off−State Voltage (Note 1)
(TJ = *40 to 110°C, Sine Wave, 50 to 60 Hz, RGK = 1 kW)
2N5060 2N5061
2N5062
2N5064
VDRM, VRRM
30 60 100 200
V
On-State Current RMS (180° Conduction Angles; TC = 80°C)
*Average On-State Current (180° Conduction Angles)
(TC = 67°C) (TC = 102°C)
*Peak Non-repetitive Surge Current, TA = 25°C (1/2 cycle, Sine Wave, 60 Hz)
Circuit Fusing Considerations (t = 8.3 ms)
IT(RMS) IT(AV)
ITSM I2t
0.8
0.51 0.255
10 0.4
A A
A A2s
*Average On-State Current (180° Conduction Angles)
(TC = 67°C) (TC = 102°C)
*Forward Peak Gate Power (Pulse Width v 1.0 msec; TA = 25°C)
*Forward Average Gate Power (TA = 25°C, t = 8.3 ms)
*Forward Peak Gate Current (Pulse Width v 1.0 msec; TA = 25°C)
*Reverse Peak Gate Vo...