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STW20NM60FD

ST Microelectronics

N-CHANNEL Power MOSFET

STP20NM60FD - STF20NM60D STW20NM60FD N-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247 FDmesh™ POWER MOSFET (with FAST...


ST Microelectronics

STW20NM60FD

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Description
STP20NM60FD - STF20NM60D STW20NM60FD N-CHANNEL 600V - 0.26Ω - 20A TO-220/TO-220FP/TO-247 FDmesh™ POWER MOSFET (with FAST DIODE) TYPE STP20NM60FD STF20NM60D STW20NM60FD n n n n VDSS 600 V 600 V 600 V RDS(on) < 0.29 Ω < 0.29 Ω < 0.29 Ω ID 20 A 20 A 20 A Pw 192 W 45 W 214 W 3 1 2 n n TYPICAL RDS(on) = 0.26Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS TO-220 TO-220FP 3 2 1 TO-247 DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. INTERNAL SCHEMATIC DIAGRAM n APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE STP20NM60FD STF20NM60D STW20NM60FD MARKING P20NM60FD F20NM60D W20NM60FD PACKAGE TO-220 TO-220FP TO-247 PACKAGING TUBE TUBE TUBE June 2003 1/11 STP20NM60FD - STF20NM60D - STW20NM60FD ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg Parameter STP20NM60FD Value STF20NM60D STW20NM60FD Unit V V V 20 12.6 80 214 1.42 A A A W W/°C V/ns V °C °C Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation ...




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