MBM200GR6

Hitachi IGBT Module / Silicon N-Channel IGBT Spec. No.IGBT-SP-99020(R1) MBM200GR6 [Rated 200A/600V, Dual-pack type] FEATURES · Low saturation voltage and high speed. · Low turn-OFF switching loss. · Low noise due to build-in free-wheeling diode. (Ultra Soft and Fast recovery Diode (USFD)) · High reliability structure. · Isolated heat sink (terminals to base). OUTLINE DRAWING Unit in mm 2- φ 5.6 19 92 80 20 18.5 E2 G2 4-Fast-on Terminal #110 G2 E2 C2E1 E2 C1 C2E1 E2 C1 3-M5 23 23 40 φ 0.8 G1 E1 CIRCUIT DIAGRAM E1 G1 7 12 30 6 Weight : 230g ABSOLUTE MAXIMUM RATINGS(TC=25°C) Item Symbol Collector-Emitter Voltage VCES Gate-Emitter Voltage VGES DC IC Collector Current 1ms ICP DC IF Forward Current 1ms IFM Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Tstg Isolation Voltage Viso Terminals Screw Torque Mounting Notes; *1: RMS current of Diode £ 60 Arms *2, *3 : Recommended value 1.67 N·m (17 kgf·cm) Unit V V A A W °C °C VRMS N·m (kgf·cm) Value 600 ±20 200 400 200 400 690 -40 ~ +150 -40 ~ +125 2500(AC 1 minute) 1.96(20) 1.96(20) *2 *3 *1 CHARACTERISTICS (TC=25°C) Item Symbol Unit Min. Typ. Max. Test Conditions Collector-Emitter Cut-Off Current ICES mA 1.0 VCE=600V, VGE=0V Gate-Emitter Leakage Current IGES nA VGE=±20V, VCE=0V ±500 Collector-Emitter Saturation Voltage VCE(sat) V 2.1 2.6 IC=200A, VGE=15V Gate-Emitter Threshold Voltage VGE(TO) V 10 VCE=5V, IC=200mA Input Capacitance Cies pF 9700 VCE=10V, VGE=0V, f=1MHz Rise Time tr 0.2 0...