MRF234
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MRF234 is Designed for Large-Signal Amplifier Applications ...
MRF234
NPN SILICON RF POWER
TRANSISTOR
DESCRIPTION:
The ASI MRF234 is Designed for Large-Signal Amplifier Applications to 100 MHz.
PACKAGE STYLE .380" 4L STUD
.112x45° A
FEATURES: Common Emitter
C
B
Omnigold™ Metalization System PG = 9.5 dB min. at 25 W/ 90 MHz
D
E
ØC
E B
H I J
MAXIMUM RATINGS
IC VCE VCB PDISS TJ TSTG θJC 4.0 A 18 V 36 V 70 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +150 °C 2.5 °C/W
DIM A B C D E F G H I J
#8-32 UNC-2A F E
G
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .980 / 24.89 .370 / 9.40 .004 / 0.10 .320 / 8.13 .100 / 2.54 .450 / 11.43 .090 / 2.29 .155 / 3.94
.230 / 5.84
.385 / 9.78 .007 / 0.18 .330 / 8.38 .130 / 3.30 .490 / 12.45 .100 / 2.54 .175 / 4.45 .750 / 19.05
CHARACTERISTICS
SYMBOL
BVCES BVCEO BVEBO ICBO hFE Cob GPE η
TC = 25 C
O
TEST CONDITIONS
IC = 200 mA IC = 200 mA IE = 5.0 mA VCB = 15 V VCE = 5.0 V VCB = 12.5 V VCC = 12.5 V Pout = 25 W IC = 1.0 A f = 1.0 MHz f = 90 MHz
MINIMUM TYPICAL MAXIMUM
36 18 4.0 1.0 5.0 100 9.5 55 120
UNITS
V V V mA --pF dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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