G20N120

Semiconductor HGTG20N120E2 April 1995 34A, 1200V N-Channel IGBT Features 34A, 1200V Latch Free Operation Typical Fall Time - 780ns High Input Impedance Low Conduction Loss Description The HGTG20N120E2 is a MOS gated, high voltage switch- ing device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. IGBTs are ideal for many high voltage switching applications operating at frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. The development type number for this device is TA49009. PACKAGING AVAILABILITY PART NUMBER PACKAGE HGTG20N120E2 TO-247 BRAND G20N120E2 Package JEDEC STYLE TO-247 COLLECTOR (BOTTOM SIDE METAL) EMITTER COLLECTOR GATE Termi...