SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION.
FEATURES High emitter-base voltage : VEBO=...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. AUDIO MUTING APPLICATION.
FEATURES High emitter-base voltage : VEBO=25V(Min) High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) Low on resistance : Ron=1 (Typ.) (IB=5mA) With Built-in Bias Resistors. Simplify Circuit Design. Reduce a Quantity of Parts and Manufacturing Process.
EQUIVALENT CIRCUIT
C
R1 B
KRC281S~KRC286S
EPITAXIAL PLANAR
NPN TRANSISTOR
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10 Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
C N K J
P7
Q 0.1 MAX
M
1. EMITTER 2. BASE 3. COLLECTOR
E SOT-23
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
MARK SPEC
TYPE
KRC281S KRC282S KRC283S KRC284S KRC285S KRC286S
hFE classification B
MQB MRB MSB MTB MUB MVB
SYMBOL VCBO VCEO VEBO IC PC Tj Tstg
RATING 50 20 25 300 150 150
-55 150
UNIT V V V mA mW
Marking
Type Name
Lot No.
2008. 10. 29
Revision No : 2
1/2
KRC281S~KRC286S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain
BVCEO BVCBO BVEBO
ICBO VCE(sat)
hFE
KRC281S
KRC282S
Input Resistor
...
