KRC231M

SEMICONDUCTOR TECHNICAL DATA SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ᴌWith Built-in Bias Resistors. ᴌSimplify Circuit Design. ᴌReduce a Quantity of Parts and Manufacturing Process. EQUIVALENT CIRCUIT R1 B C E J K D KRC231M~KRC235M EPITAXIAL PLANAR NPN TRANSISTOR B F A HM C EE 1 2 3N L 1. EMITTER 2. COLLECTOR 3. BASE G O DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX D 2.40+_ 0.15 E 1.27 F 2.30 G 14.00+_ 0.50 H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TO-92M MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO VEBO IC PC Tj Tstg RATING 30 15 5 600 400 150 -55ᴕ150 UNIT V V V mA mW ᴱ ᴱ 2000. 8. 23 Revision No : 1 1/4 KRC231M~KRC235M ELECTRICAL CHARACTERISTICS (Ta=25ᴱ) CHARACTERISTIC Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector-Emitter Saturation Voltage DC Current Gain KRC231M KRC232M Input Resistor KRC233M KRC234M KRC235M Transition Frequency On Resistance Note : * Characteristic of Transistor Only. SYMBOL BVCEO BVCBO BVEBO ICBO VCE(sat) hFE R1 fT* Ron TEST CONDITION IC=1mA IC=50ỌA IE=50ỌA VCB=30V IC=50mA, IB=2.5mA VCE=5V, IC=50mA VCE=10V, IE=-50mA, f=100MHz f=1kHz, IB=1mA, VIN=0.3V MIN. 15 30 5.0 200 - T...