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SPLCGxxx

Siemens Semiconductor

Laser Diode

Laser Diode on Submount 1.0 W cw (Class 4 Laser Product) SPL CGxx (SFH 4804x2) Features • Efficient radiation source f...


Siemens Semiconductor

SPLCGxxx

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Laser Diode on Submount 1.0 W cw (Class 4 Laser Product) SPL CGxx (SFH 4804x2) Features Efficient radiation source for cw and pulsed operation Reliable InGa(Al)As strained quantum-well material Single emitting area 200 µm × 1 µm Small C-type copper submount for OEM designs Applications Pumping solid state lasers (Nd: YAG, Yb: YAG, …) Laser soldering, heating, illumination Printing, marking, surface processing Medical applications Testing and measurement applications Type SPL CG81 SPL CG85 SPL CG94 SPL CG98 Old Type (as of Oct. 1996) SFH 480402 – SFH 480442 – Wavelength 808 nm 850 nm 940 nm 980 nm *) Ordering Code Q62702-P358 on request Q62702-P1617 on request *) Other wavelengths in the range of 780 nm ... 980 nm are available on request. Maximum Ratings (TA = 25 °C) Parameter Symbol min. Output power (continuous wave) 1) Output power (quasi-continuous wave) 1) (tp ≤ 150 µs, duty cycle ≤ 1%) Reverse voltage Operating temperature 2) Storage temperature 2) Soldering temperature, max. 10 s 2) Bedewing is excluded Values typ. – – – … … – max. 1.1 1.5 3 + 60 + 85 140 Unit Popt Pqcw VR Top Tstg Ts – – – – 10 – 40 – W W V °C °C °C 1) Optical power measurements refer to a detector with NA = 0.6 Semiconductor Group 1 02.97 SPL CGxx (SFH 4804x2) Characteristics (TA = 25 °C) Parameter Symbol min. Emission wavelength 1) λpeak 803 840 935 Values typ. 808 850 940 2 1.0 0.75 0.75 0.70 0.40 0.30 0.30 1.3 1.3 1.4 0.95 0.85 0.80 0.45 0.40 0.35 1.5 1.5 1.6 2.0 ...




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