UPD4482323

DATA SHEET MOS INTEGRATED CIRCUIT µPD4482163, 4482183, 4482323, 4482363 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION DOUBLE CYCLE DESELECT Description The µPD4482163 is a 524,288-word by 16-bit, the µPD4482183 is a 524,288-word by 18-bit, µPD4482323 is a 262,144word by 32-bit and the µPD4482363 is a 262,144-word by 36-bit synchronous static RAM fabricated with advanced CMOS technology using Full-CMOS six-transistor memory cell. The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 integrates unique synchronous peripheral circuitry, 2bit burst counter and output buffer as well as SRAM core. All input registers are controlled by a positive edge of the single clock input (CLK). The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration, such as cache and buffer memory. ZZ has to be set LOW at the normal operation. When ZZ is set HIGH, the SRAM enters Power Down State (“Sleep”). In the “Sleep” state, the SRAM internal state is preserved. When ZZ is set LOW again, the SRAM resumes normal operation. The µPD4482163, µPD4482183, µPD4482323 and µPD4482363 are packaged in 100-pin PLASTIC LQFP with a 1.4 mm package thickness for high density and low capacitive loading. Features Single 3.3 V power supply Synchronous operation Operating temperature : TA = 0 to 70 °C (-A44, -A50, -A60) TA = −40 to +85 °C (-A44Y, -A50Y, -A60Y) Internally self-ti...