IRFM450

IRFM450 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) N–CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) FEATURES HERMETICALLY SEALED ISOLATED PACKAGE AVALANCHE ENERGY RATING 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 20.07 (0.790) 20.32 (0.800) 500V 12A 0.415Ω 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC SIMPLE DRIVE REQUIREMENTS 3.81 (0.150) BSC TO–254AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate ALSO AVAILABLE IN TO–220 METAL AND SURFACE MOUNT PACKAGES EASE OF PARALLELING ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS IAR EAR dv/dt TJ , Tstg TL RθJC RθCS RθJA Gate – Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25°C Linear Derating Factor Single Pulse Avalanche Energy 2 Avalanche Current 1 Repetitive Avalanche Energy 1 Peak Diode Recovery 3 Operating and Storage Temperature Range Lead Temperature measured 1/16” (1.6mm) from case for 10 sec. Thermal Resistance Junction to Case Thermal Resistance Case to Sink (Typical) Thermal Resistance Junction to Ambient (VGS = 10V , Tcase = 25°C) (VGS = 10V , Tcase = 100°C) ±20V 12A 8A 48A 150W 1.2W/°C 750mJ 12A 15mJ 3.5V/ns –55 to 150°C 300°C 0.83°C/W 0.21°C/W 48°C/W Notes 1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature 2)...