IRFM5210

IRFM5210 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 3.53 (0.139) Dia. 3.78 (0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) P–CHANNEL MOSFET IN A TO254 FOR HIGH RELIABILITY APPLICATIONS. VDSS ID RDS(on) 100V 34A 0.07Ω 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 1 2 3 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC 20.07 (0.790) 20.32 (0.800) 3.81 (0.150) BSC FEATURES FAST SWITCHING SCREENING OPTIONS AVAILABLE TO-254AA Pin 1 –Drain Pin 2 – Source Pin 3 – Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VGS ID ID IDM PD EAS EAR TJ , Tstg RθJC Gate – Source Voltage Continuous Drain Current (Tcase = 25°C) Continuous Drain Current (Tcase = 100°C) 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy 2 Repetitive Avalanche Energy 1 Operating Junction and Storage Temperature Range Junction – Case Thermal Resistance ±20V -34A -21A -136A 125W 1.0W/°C 520mJ 12mJ –55 to +150°C 1.0W/°C Notes 1) Repetitive rating; pulse width limited by max. junction temperature. 2) VDD = –25V , L = 3.5mH , RG = 25Ω , IAS = –21A , Starting TJ = 25°C, VGS = –10V Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discover...