PD - 94362
IRFMA450 POWER MOSFET THRU-HOLE (Tabless TO-254AA)
®
500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
Product Summ...
PD - 94362
IRFMA450 POWER MOSFET THRU-HOLE (Tabless TO-254AA)
®
500V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number
IRFMA450
RDS(on)
0.415 Ω
ID
12A
HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET
transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers, high energy pulse circuits, and virtually any application where high reliability is required. The HEXFET
transistor’s totally isolated package eliminates the need for additional isolating material between the device and the heatsink. This improves thermal efficiency and reduces drain capacitance.
Tabless TO-254AA
Features:
n n n n n n
Simple Drive Requirements Ease of Paralleling Hermetically Sealed Electrically Isolated Dynamic dv/dt Rating Light-weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C ID @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current ➀ Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy ➁ Avalanche Curren...