IRFM110A

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.289 Ω (Typ.) IRFM110A BVDSS = 100 V RDS(on) = 0.4 Ω ID = 1.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C ) Continuous Drain Current (TA=70 C ) Ο Ο Value 100 1.5 1.19 1 O Units V A A V mJ A mJ V/ns W W/ C Ο Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25 C ) * Linear Derating Factor * Ο 12 + _ 20 60 1.5 0.2 6.5 2 0.016 - 55 to +150 O 1 O 1 O 3 O 2 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds Ο C 300 Thermal Resistance Symbol R θJA Characteristic Junction-to-Ambient * Typ. -Max. 62 Units Ο C/ W * When mounted on the minimum pad size recommended (PCB Mount). Rev. B ©1999 Fairchild Semiconductor Corporation IRFM110A Ο N-CHANNEL POWER MOSFET Electrical Characteristics (TA=25 C unless otherwise specified) Symbol BVDSS Characteristic Drain-Source Breakdown Voltage Min. Typ. Max. Units 100 -2.0 -----------------0.12 ------1.86 190 55 21 10 14 28 18 8.5 1.6 4.1 --4.0 100 -100 10 100 0.4...