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KMM5324004CK Dataheets PDF



Part Number KMM5324004CK
Manufacturers Samsung Semiconductor
Logo Samsung Semiconductor
Description (KMM5324104CK / KMM5324004CK) 4MBx32 DRAM Simm Using 4MBx4
Datasheet KMM5324004CK DatasheetKMM5324004CK Datasheet (PDF)

DRAM MODULE KMM5324004CK/CKG KMM5324104CK/CKG KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53240(1)04CK is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM53240(1)04CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53240(.

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DRAM MODULE KMM5324004CK/CKG KMM5324104CK/CKG KMM5324004CK/CKG & KMM5324104CK/CKG Fast Page Mode with EDO Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53240(1)04CK is a 4Mx32bits Dynamic RAM high density memory module. The Samsung KMM53240(1)04CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53240(1)04CK is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES • Part Identification - KMM5324004CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5324004CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5324104CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5324104CKG(2048 cycles/32ms Ref, SOJ, Gold) • Fast Page Mode with Extended Data Out • CAS-before-RAS refresh capability • RAS-only and Hidden refresh capability • TTL compatible inputs and outputs • Single +5V±10% power supply • 1st Gen. JEDEC standard PDPin & pinout • PCB : Height(1000mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6 A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 A11 Vcc A8 A9 Res(RAS1) RAS0 NC NC Pin 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 Symbol NC NC VSS CAS0 CAS2 CAS3 CAS1 RAS0 Res(RAS1) NC W NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26 DQ11 DQ27 DQ12 DQ28 VCC DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss PIN NAMES Pin Name A0 - A11 A0 - A10 DQ0 - DQ31 W RAS0 CAS0 - CAS3 PD1 -PD4 Vcc Vss NC Function Address Inputs(4K Ref) Address Inputs(2K Ref) Data In/Out Read/Write Enable Row Address Strobe Column Address Strobe Presence Detect Power(+5V) Ground No Connection PRESENCE DETECT PINS (Optional) Pin PD1 PD2 PD3 PD4 50NS Vss NC Vss Vss 60NS Vss NC NC NC * Pin connection changing available SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. * NOTE : A11 is used for only KMM5324004CK/CKG (4K ref.) DRAM MODULE FUNCTIONAL BLOCK DIAGRAM KMM5324004CK/CKG KMM5324104CK/CKG CAS0 RAS0 DQ0 CAS DQ1 U0 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS DQ1 U1 RAS DQ2 A0OE W A11(A10) DQ3 DQ0-DQ3 DQ4-DQ7 CAS1 DQ0 CAS DQ1 U2 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS DQ1 U3 RAS DQ2 A0OE W A11(A10) DQ3 DQ8-DQ11 DQ12-DQ15 CAS2 DQ0 CAS DQ1 U4 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS DQ1 U5 RAS DQ2 A0OE W A11(A10) DQ3 DQ16-DQ19 DQ20-DQ23 CAS3 DQ0 CAS U6 DQ1 RAS DQ2 A0OE W A11(A10) DQ3 DQ0 CAS U7 DQ1 RAS DQ2 A0OE W A11(A10) DQ3 DQ24-DQ27 DQ28-DQ31 W A0-A11(A10) Vcc .1 or .22uF Capacitor for each DRAM Vss To all DRAMs DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current Symbol VIN, VOUT VCC Tstg Pd IOS KMM5324004CK/CKG KMM5324104CK/CKG Rating -1 to +7.0 -1 to +7.0 -55 to +150 8 50 Unit V V °C W mA * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70°C) Item Supply Voltage Ground Input High Voltage Input Low Voltage *1 : VCC+2.0V/20ns, Pulse width is measured at VCC. *2 : -2.0V/20ns, Pulse width is measured at VSS. Symbol VCC VSS VIH VIL Min 4.5 0 2.4 -1.0*2 Typ 5.0 0 Max 5.5 0 VCC+1*1 0.8 Unit V V V V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) Symbol ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 II(L) IO(L) VOH VOL Speed -5 -6 Don′t care -5 -6 -5 -6 Don′t care -5 -6 Don′t care Don′t care KMM5324004CK/CKG Min - KMM5324104CK/CKG Min - Max 720 640 16 720 640 640 560 8 720 640 40 5 0.4 Max 880 800 16 880 800 720 640 8 880 800 40 5 0.4 Unit mA mA mA mA mA mA mA mA mA mA uA uA V V -40 -5 2.4 - - - -40 -5 2.4 - : Operating Current * (RAS, CAS, Address cycling @tRC=min) : Standby Current (RAS=CAS=W=VIH) : RAS Only Refresh Current * (CAS=VIH, RAS cycling @tRC=min) : EDO Mode Current * (RAS=VIL, CAS Address cycling : tHPC =min) : Standby Current (RAS=CAS=W=Vcc-0.2V) : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @tRC=min) : Input Leakage Current (Any input 0≤VIN≤Vcc+0.5V, all other pins not under test=0 V) : Output Leakage Current(Data Out is disabled, 0V≤VOUT ≤Vcc) : Output High Voltage Level (IOH = -5mA) : Output Low Voltage Level (IOL = 4.2mA) * NOTE : ICC1 , ICC3 , ICC4 and ICC6 are dependent on output.


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