KMM5364005CK

DRAM MODULE KMM5364005CK/CKG KMM5364105CK/CKG KMM5364005CK/CKG & KMM5364105CK/CKG Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K, Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53640(1)05CK is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM53640(1)05CK consists of eight CMOS 4Mx4bits DRAMs in 24-pin SOJ package and one CMOS 4Mx4 bit Quad CAS with EDO DRAM in 28-pin SOJ package mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM53640(1)05CK is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets. FEATURES Part Identification - KMM5364005CK(4096 cycles/64ms Ref, SOJ, Solder) - KMM5364005CKG(4096 cycles/64ms Ref, SOJ, Gold) - KMM5364105CK(2048 cycles/32ms Ref, SOJ, Solder) - KMM5364105CKG(2048 cycles/32ms Ref, SOJ, Gold) Fast Page Mode with Extended Data Out CAS-before-RAS refresh capability RAS-only and Hidden refresh capability TTL compatible inputs and outputs Single +5V±10% power supply JEDEC standard PDPin & pinout PCB : Height(1000mil), single sided component PERFORMANCE RANGE Speed -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tHPC 25ns 30ns PIN CONFIGURATIONS Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 Symbol VSS DQ0 DQ18 DQ1 DQ19 DQ2 DQ20 DQ3 DQ21 Vcc NC A0 A1 A2 A3 A4 A5 A6 A...