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2SC4811

NEC

NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED...


NEC

2SC4811

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DATA SHEET DARLINGTON POWER TRANSISTOR 2SC4811 NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES Auto-mounting possible in radial taping specifications Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions On-chip C-to-E reverse diode Fast switching speed ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT** Tj Tstg Ratings 100 100 8.0 ±8.0 ±16 0.8 1.8 150 −55 to +150 Unit V V V A A A W °C °C * PW ≤ 300 µs, duty cycle ≤ 10% ** Ta = 25°C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15602EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed...




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