2SC4814

DATA SHEET SILICON POWER TRANSISTOR 2SC4814 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for highprecision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for solenoid driving in automotive equipment. In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus contributing to mounting cost reduction. FEATURES Low VCE(sat): VCE(sat) ≤ 0.3 V High hFE: On-chip dumper-diode Auto-mounting possible in radial taping specifications @IC = 1.5 A, IB = 10 mA hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg Ta = 25°C PW ≤ 300 µs, duty cycle ≤ 10% Conditions Ratings 120 100 7.0 ±2.5 ±5.0 1.0 1.8 150 −55 to +150 Unit V V V A A A W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D15604EJ2V0DS00 (2nd edition) Dat...