Power Transistor Arrays
PUA3117 (PU3117)
Silicon NPN triple diffusion planar type
For power amplification and switching...
Power
Transistor Arrays
PUA3117 (PU3117)
Silicon
NPN triple diffusion planar type
For power amplification and switching
20.2±0.3
Unit: mm
4.0±0.2
■ Features
High forward current transfer ratio hFE Satisfactory linearity of forward current transfer ratio hFE
NPN 3 elements
9.5±0.2 1.65±0.2 8.0±0.2
0.8±0.25 Solder Dip 5.3±0.5 4.4±0.5 0.5±0.15 1.0±0.25 2.54±0.2 7 × 2.57 = 17.78±0.25 C 1.5±0.5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 80 60 6 3 6 1 15 2.4 150 −55 to +150 °C °C Unit V V V A A A W
0.5±0.15
1: Emitter 2: Base 3: Collector 1 2 3 4 5 6 7 8 4: Base 5: Collector 6: Base 7: Collector 8: Emitter SIP8-A1 Package
■ Electrical Characteristics TC = 25°C ± 3°C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Symbol VCEO ICBO ICEO IEBO hFE VCE(sat) fT Conditions IC = 25 mA, IB = 0 VCB = 80 V, IE = 0 VCE = 40 V, IB = 0 VEB = 6 V, IC = 0 VCE = 4 V, IC = 0.5 A IC = 2 A, IB = 0.05 A VCE = 12 V, IC = 0.2 A, f = 10 MHz 50 500 Min 60 100 100 100 2 500 1.0 ...