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MOCD211-M Dataheets PDF



Part Number MOCD211-M
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS
Datasheet MOCD211-M DatasheetMOCD211-M Datasheet (PDF)

DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOCD211-M DESCRIPTION The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. FEATURES • U.L. Recognized (File #E90700, Volume 2) • VDE Recognized (File #136616) (add option.

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DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOCD211-M DESCRIPTION The MOCD211-M device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline plastic package. It is ideally suited for high density applications and eliminates the need for through-the-board mounting. FEATURES • U.L. Recognized (File #E90700, Volume 2) • VDE Recognized (File #136616) (add option “V” for VDE approval, i.e, MOCD211V-M) • Minimum BVCEO of 30 Volts Guaranteed • Standard SOIC-8 Footprint, with 0.050" Lead Spacing • Compatible with Dual Wave, Vapor Phase and IR Reflow Soldering • High Input-Output Isolation of 2500 VAC(rms) Guaranteed • Compact Dual Channel Optocoupler ANODE 1 1 8 COLLECTOR 1 CATHODE 1 2 7 EMITTER 1 APPLICATIONS • Interfacing and coupling systems of different potentials and impedances • General purpose switching circuits • Monitor and detection circuits ANODE 2 3 6 COLLECTOR 2 CATHODE 2 4 5 EMITTER 2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless otherwise specified) Rating EMITTER Forward Current - Continuous Forward Current - Peak (PW = 100 µs, 120 pps) Reverse Voltage LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Collector Current-Continuous Detector Power Dissipation @ TA = 25°C Derate above 25°C TOTAL DEVICE Input-Output Isolation Voltage(1,2,3) (f = 60 Hz, 1 min. Duration) Total Device Power Dissipation @ TA = 25°C Derate above 25°C Ambient Operating Temperature Range Storage Temperature Range Symbol IF IF (pk) VR PD Value 60 1.0 6.0 90 0.8 30 7.0 150 150 1.76 Unit mA A V mW mW/°C V V mA mW mW/°C VCEO VECO IC PD VISO PD TA Tstg 2500 250 2.94 -40 to +100 -40 to +125 Vac(rms) mW mW/°C °C °C © 2003 Fairchild Semiconductor Corporation Page 1 of 8 5/28/03 DUAL CHANNEL PHOTOTRANSISTOR SMALL OUTLINE SURFACE MOUNT OPTOCOUPLERS MOCD211-M ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter EMITTER Input Forward Voltage Reverse Leakage Current Capacitance DETECTOR Collector-Emitter Dark Current Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Capacitance COUPLED Current Transfer Ratio(4) Collector-Emitter Saturation Voltage Turn-On Time Turn-Off Time Rise Time Fall Time Isolation Surge Voltage(1,2,3) Isolation Resistance(2) Isolation Capacitance(2) ** Typical values at TA = 25°C NOTE: 1. Input-Output Isolation Voltage, VISO, is an internal device dielectric breakdown rating. 2. For this test, Pins 1, 2, 3 and 4 are common and Pins 5, 6, 7 and 8 are common. 3. VISO rating of 2500 VAC(rms) for t = 1 min. is equivalent to a rating of 3,000 VAC(rms) for t = 1 sec. 4. Current Transfer Ratio (CTR) = IC/IF x 100%. IF = 10 mA, VCE = 10 V IC = 2.0 mA, IF = 10 mA IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) IC = 2.0 mA, VCC = 10 V, RL = 100 Ω (fig 6.) .


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