For Power Amplifier Power Transistor
SAP16P
(Complement to type SAP16N)
Equivalent circuit
Emitter resistor
Application: Audio sElectrical Characteristics
...
Description
SAP16P
(Complement to type SAP16N)
Equivalent circuit
Emitter resistor
Application: Audio sElectrical Characteristics
Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE REB Conditions VCB = –160V VEB = – 5V IC = – 30mA VCE = – 4V, IC=–10A IC = – 10A, IB =–10mA IC = – 10A, IB = – 10mA VCE = – 20V, IC = – 40mA IF = 2.5mA IE = 1A 0.176 90 1200 1540 0.22 100 0.264 110 –160 5000 20000 –2.0 –2.5 V V mV mV Ω Ω Ratings
min typ max
sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings –160 –160 –5 –15 –1 150 ( Tc=25°C) 10 150 –40 to +150 Unit V V V A A W mA °C °C
( Ta = 25°C ) Unit µA µA V
External Dimensions
3.3±0.2 15.4±0.3 9.9±0.2 φ 3.2±0.2 5±0.2
(Unit: mm)
4.5±0.2 1.6±0.2
–100 –100
3.4max
a b
1±0.1 (41)
(2.5)
0.65 –0.1
+0.2 0.8 –0.1
+0.2
2.54±0.1 3.81±0.1 (7.62) (12.7) 17.8±0.3 4±0.1
2.54±0.1 3.81±0.1
(18)
1.35 –0.1
+0.2
0.65 –0.1
VhFE Rank O (5000 to 12000), Y (8000 to 20000)
E S C D B
Weight: Approx 8.3g a. Part No. b. Lot No.
IC – VCE Characteristics (Typical)
–50mA –5. 0m A –3 .0m A
VCE(sat) – IB Characteristics (Typical)
Collector-Emitter Saturation Voltage VCE(sat) (V)
–3 –15
IC – VBE Temperature Characteristics (Typical)
(VCE =–4V)
–15
–
m 2.0
A
–1.5m
A
–1.2m
A
–1.0mA
Collector Current IC (A)
–10
–0.8mA
–2 IC = –15A –10A –1 –5A
Collector Current IC (A)
–10
– 0.5mA
–5 IB = –0.3mA
–5
125°C 25°C –30°C
0
0
–2
–4
–6
0 –0.4
–1
–5
–10
–50
–100 –200
0
0
–1
–2
2±0.1
+0.2
(36°)
7...
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