SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Buil...
SEMICONDUCTOR
TECHNICAL DATA
SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES
With Built-in Bias Resistors. Simplify Circuit Design.
A1
KRA730U~KRA734U
EPITAXIAL PLANAR
PNP TRANSISTOR
B B1 1 6 5 4 D
Reduce a Quantity of Parts and Manufacturing Process. High Packing Density.
2 3
DIM A A1 B
B1 C D G H
MILLIMETERS _ 0.20 2.00 + _ 0.1 1.3 + _ 0.1 2.1 + _ 0.1 1.25 +
0.65 0.2+0.10/-0.05 0-0.1 _ 0.1 0.9 + 0.15+0.1/-0.05
A
H
C
C
EQUIVALENT CIRCUIT
C B R1
EQUIVALENT CIRCUIT (TOP VIEW)
6 5 4
T G
T
Q1
Q2
1. 2. 3. 4. 5. 6.
Q1 Q2 Q2 Q2 Q1 Q1
EMITTER EMITTER BASE COLLECTOR BASE COLLECTOR
E
1
2
3
US6
MAXIMUM RATING (Ta=25
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current
)
SYMBOL VCBO VCEO VEBO IC RATING -50 -50 -5 -100 UNIT V V V mA CHARACTERISTIC Collector Power Dissipation Junction Temperature Storage TemperatureRange * Total Rating. SYMBOL PC * Tj Tstg RATING 200 150 -55 150 UNIT mW
ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Transition Frequency KRA730U KRA731U Input Resistor KRA732U KRA733U KRA734U Note : * Characteristic of
transistor only.
)
SYMBOL ICBO IEBO hFE VCE(sat) fT * TEST CONDITION VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-1mA IC=-10mA, IB=-0.5mA VCE=-10V, IC=-5mA MIN. 120 R1 TYP. -0.1 250 4.7 10 100 22 47 MAX. -100 -100 -0.3 Type Name
5 4
UNIT nA nA
V M...
