MBR1100

MBR 1100 SCHOTTKY DIE SPECIFICATION General Description: 100 V 1 A ( Low Ir) ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Amperes, Ta=25¡æ Maximum Instantaneous Reverse Voltage VR= 103 Volt, Ta=25¡æ Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperatures SYM VRRM IFAV VF MAX TYPE: MBR1100 (RSingle ¡õ Dual) Anode Spec. Limit 100 1 0.755 0.725 Die Sort 107 UNIT Volt Amp Volt IR MAX Cj MAX IFSM Tj TSTG 0.015 0.010 mA pF 52 -50 to +150 -50 to +150 Amp ¡æ ¡æ Specification apply to die only. Actual performance may degrade when assembled. We do not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING DIM A B C B Top-side Metal S iO 2 Passivation P+ Guard Ring Back-side Metal ITEM Die Size Top Metal Pad Size Thickness (Min) Thickness (Max) µ m 1040 880 203 254 Mil 40.94 34.64 8.00 10.00 A PS: (1)Cutting street width is around 16µ m (0.62mil). (2)Both of top-side and back-side metals are Ti/Ni/Ag. C ...