MBR1100
Axial Lead Rectifier
These rectifiers employ the Schottky Barrier principle in a large area metal−to−silicon po...
MBR1100
Axial Lead Rectifier
These rectifiers employ the
Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Features
Low Reverse Current Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Highly Stable Oxide Passivated Junction Guard−Ring for Stress Protection Low Forward Voltage 175°C Operating Junction Temperature High Surge Capacity These Devices are Pb−Free and are RoHS Compliant
Mechanical Characteristics:
Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Cathode Indicated by Polarity Band
MAXIMUM RATINGS
Rating
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current (VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W, P.C. Board Mounting, [see Note 3], TA = 120°C)
Peak Repetitive Forward Current (VR(equiv) ≤ 0.2 VR (dc), RqJA = 50°C/W, P.C. Board Mounting, [see Note 3], TA = 110°C)
Non−Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Symbol VRRM VRWM
VR IO
IFRM
IFSM
Value 100
1.0
2.0
50
...