STS3C2F100

STS3C2F100 N-CHANNEL 100V - 0.110 Ω - 3A SO-8 P-CHANNEL 100V - 0.320 Ω - 1.5A SO-8 COMPLEMENTARY PAIR STripFET™ POWER MOSFET TYPE STS3C2F100(N-Channel) STS3C2F100(P-Channel) ■ ■ ■ VDSS 100 V 100 V RDS(on) < 0.145Ω < 0.380Ω ID 3.0 A 1.5 A ■ ■ TYPICAL RDS(on) (N-Channel) = 0.110 Ω TYPICAL RDS(on) (P-Channel) = 0.320 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY ULTRA LOW GATE CHARGE ULTRA LOW ON-RESISTANCE SO-8 DESCRIPTION This MOSFET is the second generation of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS ■ DC MOTOR DRIVES ■ AUDIO AMPLIFIER Ordering Information SALES TYPE STS3C2F100 MARKING S3C2F100 PACKAGE SO-8 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM() Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Storage Temperature Max. Operating Junction Temperature N-CHANNEL 100 100 ± 20 3.0 1.9 12 2 -55 to 150 150 1.5 1.0 6 P-CHANNEL Unit V V V A A A W °C °C () Pulse width limited by safe operating area. June 2004 . Note: P-CHANNEL MOSFET actual polarity of voltage...