IRLMS1503

PD - 91508D IRLMS1503 HEXFET® Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low RDS(on) N-Channel MOSFET D D G 1 6 A D D S VDSS = 30V RDS(on) = 0.10Ω 2 5 3 4 Description Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The Micro6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Top View Micro6 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C V GS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Max. 3.2 2.6 18 1.7 13 ± 20 5.0 -55 to + 150 Units A W mW/°C V V/ns °C Thermal Resistance Ratings RθJA Maximum Junction-to-Ambient „ Parameter Min. ––– Typ. ––– Max 75 Units °C/W ww...