IRLMS4502

PD- 93759B IRLMS4502 HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel D 1 6 A D VDSS = -12V D 2 5 D G 3 4 S RDS(on) = 0.042Ω Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with Rds(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6ä Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C EAS VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy„ Gate-to-Source Voltage Junction and Storage Temperature Range Max. -12 -5.5 -4.4 -44 1.7 1.1 0.013 28 ± 12 -55 to + 150 Units V A W W/°C mJ V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 75 Units °C/W www.irf.com 1 01/13/03 IRLMS4502 Electrical Characteristics @ TJ = 25°C (unless other...