DatasheetsPDF.com
IRLM110A
HEXFET Power MOSFET
Description
Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 100V ν Lower RDS(ON) : 0.336 Ω (Typ.) IRLM110A BVDSS = 100 V RDS(on) = 0.44 Ω ID = 1.5 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute...
International Rectifier
Download IRLM110A Datasheet
Similar Datasheet
IRLM110A
HEXFET Power MOSFET
- International Rectifier
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
