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IRLM120A

International Rectifier
Part Number IRLM120A
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Oct 19, 2005
Detailed Description Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Datasheet PDF File IRLM120A PDF File

IRLM120A
IRLM120A

Overview
Advanced Power MOSFET FEATURES n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V n Lower RDS(ON) : 0.
176 Ω (Typ.
) IRLM120A BVDSS = 100 V RDS(on) = 0.
22 Ω ID = 2.
3 A SOT-223 2 1 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ, TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Continuous Drain Current (TC=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power...


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