HEXFET Power MOSFET
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n ...
Description
Advanced Power MOSFET
FEATURES
n Avalanche Rugged Technology n Rugged Gate Oxide Technology n Lower Input Capacitance n Improved Gate Charge n Extended Safe Operating Area n Lower Leakage Current : 10 µA (Max.) @ VDS = 200V n Lower RDS(ON) : 1.185 Ω (Typ.)
IRLM210A
BVDSS = 200 V RDS(on) = 1.5 Ω ID = 0.77 A
SOT-223
2
1 3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25 C) Continuous Drain Current (TA=70 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
o Total Power Dissipation (TA=25 C) * Linear Derating Factor * o o
Value 200 0.77 0.62 ① ② ① ① ③ 6.1 ±20 27 0.77 0.18 5.0 1.8 0.014 - 55 to +150
Units V A A V mJ A mJ V/ns W W/ C
o
Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from case for 5-seconds
o
C
300
Thermal Resistance
Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 69.4 Units
o
C/W
* When mounted on the minimum pad size recommended (PCB Mount).
Rev. A
IRLM210A
Electrical Characteristics (TC=25oC unless otherwise specified)
Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshold Voltage Gate-Source Leakage , Forward Gate-Source Leakage ...
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