IRLM220A

Advanced Power MOSFET FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = 200V ν Lower RDS(ON) : 0.609 Ω (Typ.) IRLM220A BVDSS = 200 V RDS(on) = 0.8 Ω ID = 1.13 A SOT-223 2 1 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TA=25°C) Continuous Drain Current (TA=70°C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TA=25°C) * Linear Derating Factor * Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8” from case for 5-seconds (2) (1) (1) (3) (1) Value 200 1.13 0.9 9 ±20 29 1.13 0.2 5 2 0.016 - 55 to +150 °C 300 Units V A A V mJ A mJ V/ns W W/°C Thermal Resistance Symbol RθJA Characteristic Junction-to-Ambient * Typ. -Max. 62.5 Units °C/W * When mounted on the minimum pad size recommended (PCB Mount). Rev. A N-CHANNEL POWER MOSFET IRLM220A Characteristic -- Units Min. Typ. Max. 200 -1.0 -----------------0.18 ------2.8 330 55 8 6 24 6 6 10.3 2.0 4.4 0.8 -430 70 30 25 20 60 20 15 --nC ns pF -2.0 100 -100 10 100 µA Ω S V V nA Test Condition VGS=0V,ID=250µA See Fig 7 VDS=5V,ID=250µA VGS=20V VGS=--20V VDS=200V VDS=160V,TC=125°C VGS=5V,ID=0.57...